Work

Capacitance Models Of Algan/Gan High Electron Mobility Transistors

Year: 2016

Type: article

Abstract: In this study, we report calculations of gate capacitance of AlGaN/GaN HEMTs with nextnano device simulation software. We have used a physical gate capacitance model for III-V FETs that incorporates quantum capacitance and centroid capacitance in the channel. These simulations explore various device structures with different values of barrier thickness and channel thickness. A detailed understanding of the impact of gate capacitance in HEMTs will allow us to determine their role in future 10 nm physical gate length node.

Source: Zenodo (CERN European Organization for Nuclear Research)

DOI: 10.5281/zenodo.1123730

Authors: A. Douara, N. Kermas, B. Djellouli

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2336734650

FWCI:

Cites:

Cited by: 3

Related to: 10