Year: 2016
Type: article
Abstract: All-optical logic circuits using surface plasmon polaritons have a potential for high-speed information processing with high-density integration beyond the diffraction limit of propagating light. However, a number of logic gates that can be cascaded is limited by complicated signal phase adjustment. In this study, we demonstrate a half-adder operation with simple phase adjustment using plasmonic multimode interference (MMI) devices, composed of dielectric stripes on a metal film, which can be fabricated by a complementary metal-oxide semiconductor (MOS)-compatible process. Also, simultaneous operations of XOR and AND gates are substantiated experimentally by combining 1 × 1 MMI based phase adjusters and 2 × 2 MMI based intensity modulators. An experimental on-off ratio of at least 4.3 dB is confirmed using scanning near-field optical microscopy. The proposed structure will contribute to high-density plasmonic circuits, fabricated by complementary MOS-compatible process or printing techniques.
Source: Scientific Reports
DOI: 10.1038/srep24546
Institution: Toyohashi University of Technology
Language: English
Subfield: Biomedical Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,690
OpenAlex ID: W2339868326