Work

Study towards integration of In0.53Ga0.47As on 300 mm Si for CMOS sub-7 nm node: Development of thin graded In Ga1−As buffers on GaAs

Year: 2016

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2016.04.014

Authors: Y. Mols, B. Kunert, G. Gaudin, R. Langer, M. Caymax

Institutions: IMEC, Soitec (France)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2339872806

FWCI: 0.784

Cites: 19

Cited by: 8

Related to: 10