Work

Drain current versus drain voltage characteristics for an analytical Al0.25Ga0.75N/GaN superlattice MOSFET

Year: 2016

Type: article

Source: Superlattices and Microstructures

DOI: 10.1016/j.spmi.2016.04.003

Authors: Kaushik Mazumdar, Gyanesh Kumar Pathak, Aniruddha Ghosal

Institutions: Indian Institute of Technology Dhanbad, Indian Institute of Technology Kanpur, University of Calcutta

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2339986317

FWCI: 0.988

Cites: 6

Cited by: 7

Related to: 10