Work

On the turn-around phenomenon in n-MOS transistors under NBTI conditions

Year: 2016

Type: article

Source: Solid-State Electronics

DOI: 10.1016/j.sse.2016.04.001

Authors: A. Benabdelmoumene, B. Djezzar, A. Chenouf, H. Tahi, B. Zatout, M. Kechouane

Institutions: University of Sciences and Technology Houari Boumediene, Centre de Développement des Technologies Avancées

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2344257534

FWCI: 0.654

Cites: 40

Cited by: 14

Related to: 10