Structural and luminescent properties of Mn,Co doped SiC thin film
Year: 2008
Type: article
Abstract: SiC film doped with manganese(Mn)or cobalt(Co)and co-doped with Mn and Co were prepared by the RF-magnetron sputtering.The as-deposited films were annealed in the temperature of 1050℃under argon ambient.The thin films were characterized by X-ray diffraction(XRD),Fourier transform infrared spectrosco- py(FTIR),scanning electron microscopy(SEM),and Photoluminescence(PL).The results showed that Mn or Co doping leads to a decrease of XRD peak of SiC film due to the lattice distortion and to a broadening of Si- C absorption band,a weakening of Si-C vibration related peak,and an enhancing of Si-O group peak.Mean- while,a more intensive near band photoluminescence emission(414nm),which wasapproximately 1.3 times higher in intensity,was observed at room temperature in Mn doped SiC films due to the increased Si vacancy concentration.A weaken emission also at 414nm,which was approximately 0.7 times in intensity,was ob- served in Co doped SiC films due to the decreased Si vacancy concentration.For co-doping of Co and Mn with a same total concentration,the luminescent intensity kept almost unchanged due to the compensation effect.
Author: Zhengxia Tang
Institution: Nanjing University of Aeronautics and Astronautics
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,258
OpenAlex ID: W2349232007