Formation of n+/p junctions less than 20 nm deep in Ge and diffusion control by Flash Lamp Annealing (FLA)
Year: 2015
Type: conference-paper
Authors: H. Kawarazaki, H. Tanimura, Y. Ono, T. Yamada, S. Kato, T. Aoyama, I. Kobayashi
Institution: SCREEN Semiconductor Solutions Co., Ltd. (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2359277828