Work

Monitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron X-ray topography, electrical data and raman spectroscopy

Year: 1999

Type: article

Source: Journal of Materials Science Materials in Electronics

DOI: 10.1023/a:1008993322697

Authors: P. J. Mcnally, J. W. Curley, M. Bolt, A. Reader, T. Tuomi, R. Rantama¨ki, A. N. Danilewsky, I. DeWolf

Institutions: Dublin City University, Philips (France), IMEC

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Deutsches Elektronen-Synchrotron

OpenAlex ID: W238134352

FWCI: 1.331

Cites: 18

Cited by: 15

Related to: 10