Work

Effects of GeO2-Metal Interaction on VFB of GeO2 MIS Gate Stacks

Year: 2010

Type: conference-paper

Source: International Conference on Solid State Devices and Materials (SSDM)

DOI: 10.7567/ssdm.2010.b-2-1

Authors: F. I. Alzakia, K. Kita, T. Nishimura, K. Nagashio, A. Toriumi

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2465205271

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