Work

Performance comparison and device analysis Between Si IGBT and SiC MOSFET

Year: 2016

Type: conference-paper

Source: IEEE Transportation Electrification Conference and Expo

DOI: 10.1109/itec.2016.7520242

Authors: Ahmad Albanna, Andrew Malburg, Mohammad Anwar, Atul Guta, Nidhi Tiwari

Institution: General Motors (India)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W2480114432

FWCI: 4.65

Cites: 9

Cited by: 37

Related to: 10