Work

Crystal Growth of β-SiC on Si and Its Application to MOSFETs

Year: 1992

Type: book-chapter

Source: Springer proceedings in physics

DOI: 10.1007/978-3-642-84402-7_16

Authors: A. Suzuki, K. Furukawa, Y. Fujii, M. Shigeta, S. Nakajima

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2489879261

FWCI: 6.966

Cites: 7

Cited by: 4

Related to: 10