Work

Characterisation of GaN–In x Ga1−x N quantum-well lasers

Year: 2009

Type: article

Source: Applied Physics B

DOI: 10.1007/s00340-009-3443-x

Authors: K. Melouk, N. Boughanmi

Institution: Université des Sciences et de la Technologie d'Oran Mohamed Boudiaf

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2497399461

FWCI: 0.255

Cites: 21

Cited by: 1

Related to: 10