Work

Highly reliable a-IGZO TFTs with SiN X gate insulator deposited by SiF 4 /N 2

Year: 2012

Type: conference-paper

Source: International Workshop on Active-Matrix Flatpanel Displays and Devices

Authors: Haruka Yamazaki, Mami N. Fujii, Yoshihiro Ueoka, Yasuaki Ishikawa, Masaki Fujiwara, Eiji Takahashi, Yukiharu Uraoka

Institutions: Nara Institute of Science and Technology, Nissin Electric Co., Ltd. (Japan)

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W250787441

FWCI: 0.406

Cites:

Cited by: 1

Related to: 10