Work

High temperature dielectric properties of SiO2 films deposited by TEOS PECVD

Year: 2016

Type: conference-paper

Source: IEEE International Conference on Dielectrics (ICD)

DOI: 10.1109/icd.2016.7547801

Authors: Lumei Wei, Marie-Laure Locatelli, Sombel Diaham, Cong Duc Pham, Gregory Grosset, Lionel Dupuy

Institutions: Centre National de la Recherche Scientifique, Université Toulouse III - Paul Sabatier, Institut National Polytechnique de Toulouse, Laboratoire Plasma et Conversion d'Energie, Université de Toulouse, Ibs (France)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Direction Générale de la Compétitivité, de l’Industrie et des Services

OpenAlex ID: W2509607345

FWCI:

Cites: 4

Cited by: 2

Related to: 10