Work

A Method for Yield and Scaling Characterization of FETs in an InGaP/GaAs Merged HBT-FET (BiFET) Technology

Year: 2016

Type: article

Source: IEEE Transactions on Semiconductor Manufacturing

DOI: 10.1109/tsm.2016.2606886

Authors: Andre G. Metzger, Jiang Li, Jiro Yota, Hsiang-Chih Mike Sun, Ravi Ramanathan, Cristian Cismaru

Institution: Skyworks Solutions (United States)

Language: English

Topic: Integrated Circuits and Semiconductor Failure Analysis

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2520122773

FWCI:

Cites: 1

Cited by: 1

Related to: 10