Work

Four-State Anti-Ferroelectric Random Access Memory

Year: 2016

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2016.2614841

Authors: Melvin M. Vopson, Xiaoli Tan

Institutions: University of Portsmouth, Iowa State University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, University of Portsmouth

Award: SusChEM: Nanoscale Insight into Electric Fatigue of Lead-Free Piezoelectric Ceramics

OpenAlex ID: W2528984591

FWCI: 0.262

Cites: 17

Cited by: 34

Related to: 10