Work

Efficiency droop in GaN LEDs at high injection levels: Role of hydrogen

Year: 2016

Type: article

Source: Semiconductors

DOI: 10.1134/s1063782616100109

Authors: N. I. Bochkareva, I. A. Sheremet, Yu. G. Shreter

Institutions: Russian Academy of Sciences, Ioffe Institute, Financial University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2531180845

FWCI: 0.668

Cites: 25

Cited by: 8

Related to: 10