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EFFECT OF MOSFET p-n JUNCTION LENGTH ON LEAKAGE CURRENT

Year: 2016

Type: article

Source: Far East Journal of Electronics and Communications

DOI: 10.17654/ecsv3pi16101

Authors: Debasis Mukherjee, B. V. Ramana Reddy

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2543081815

FWCI: 0.131

Cites:

Cited by: 4

Related to: 10