Work

RF output power analysis of 4H-SiC MESFETs using a novel large signal time domain simulation technique.

Year: 2002

Type: conference-paper

Source: International Workshop on Physics of Semiconductor Devices

Authors: Qamar Ul Wahab, Robert Jonsson, S. Rudner, Christer Svensson

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W255333271

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