Work

In-situ passivation of quaternary barrier InAlGaN/GaN HEMTs

Year: 2016

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2016.11.014

Authors: Piero Gamarra, Cedric Lacam, Maurice Tordjman, Farid Medjdoub, Marie-Antoinette di Forte-Poisson

Institution: Institut d'Electronique, de Microélectronique et de Nanotechnologie

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Agence Nationale de la Recherche, CHIST-ERA

Award: InAlN Layers and InAlN Heterostructures for Optimized high electron Mobility transistors

OpenAlex ID: W2555436731

FWCI: 1.335

Cites: 18

Cited by: 21

Related to: 10