Work

Nanoindentation of GaN/SiC thin films on silicon substrate

Year: 2016

Type: article

Source: Journal of Physics and Chemistry of Solids

DOI: 10.1016/j.jpcs.2016.11.004

Authors: A.S. Grashchenko, S.A. Kukushkin, A.V. Osipov, A.V. Redkov

Institutions: Institute of Problems of Mechanical Engineering, ITMO University, Peter the Great St. Petersburg Polytechnic University

Language: English

Topic: Metal and Thin Film Mechanics

Subfield: Mechanics of Materials

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Russian Foundation for Basic Research

Awards: G2673430966, G2822528464

OpenAlex ID: W2555583293

FWCI: 2.246

Cites: 28

Cited by: 33

Related to: 10