Work

Review of III-V Based High Electron Mobility Transistors

Year: 2015

Type: article

Author: Jun Zhu

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2556472259

FWCI:

Cites: 18

Cited by: 3

Related to: 10