Work

Chemically Homogeneous and Thermally Robust Ni1–xPtxSi Film Formed Under a Non-Equilibrium Melting/Quenching Condition

Year: 2016

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.6b12968

Authors: Jinbum Kim, Seongheum Choi, Taejin Park, Jinyong Kim, Chulsung Kim, Taeho Cha, Hyangsook Lee, Eunha Lee, Jung Yeon Won, Hyung-Ik Lee, Sangjin Hyun, Sunjung Kim, Dongsuk Shin, Yihwan Kim, Keewon Kwon, Hyoungsub Kim

Institutions: Samsung (South Korea), Samsung Electronics (South Korea), Sungkyunkwan University, Samsung Advanced Institute of Technology (South Korea)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Trade, Industry and Energy, National Research Foundation of Korea, Korea Semiconductor Research Consortium

Awards: G3955579745, G6499576157

OpenAlex ID: W2563170366

FWCI: 0.49

Cites: 42

Cited by: 7

Related to: 10