Work

High-Performance 500 V Quasi- and Fully-Vertical GaN-on-Si pn Diodes

Year: 2016

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2016.2646669

Authors: Yuhao Zhang, Daniel Piedra, Min Sun, Jonas Hennig, Armin Dadgar, Lili Yu, Tomas Palacios

Institutions: Massachusetts Institute of Technology, Otto-von-Guericke-Universität Magdeburg

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Massachusetts Institute of Technology, Advanced Research Projects Agency - Energy

OpenAlex ID: W2564005673

FWCI: 3.901

Cites: 27

Cited by: 88

Related to: 10