Work

Performance of MBE grown CdTe photoconductor arrays for hard x-ray detection

Year: 1995

Type: conference-paper

Abstract: Photoconductor linear array detectors for hard x-ray photon detection were fabricated using Molecular Beam Epitaxially (MBD) grown (111)B CdTe layers on (100) orientation Si substrates. Since the Si substrates used for the MBE growth are semiconducting, the CdTe epitaxial layers were removed from the substrates using chemical etching of Si and mounted on insulating ceramic substrates. Linear array detectors were then fabricated on the resulting CdTe layers. The response current uniformity of 64 element photoconductor array was measured at 300 K and 230 K. The ohmic contact to the highly resistive CdTe is excellent to provide the linear response to the x-ray photon counts. The response current was linearly increased in the energies from 7 to 19 KeV. Stability of the detectors are very satisfactory and they were tested for over an extended period of time without any noticeable degradations. The performance of the photoconductor was greatly improved when the detector was cooled by a thermoelectric cooler. Due to its reduced noise at these temperatures, the dynamic range of the detector response increases to nearly four decades at 230 K.

Source: University of North Texas Digital Library (University of North Texas)

Authors: Yoo, S. S., Montano, P. A., Rodricks, B., Faurie, J. P., Sivanathan, S.

Language: English

Topic: Advanced Semiconductor Detectors and Materials

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2564501928

FWCI:

Cites:

Cited by:

Related to: 10