Work

Deep-to-shallow level transition of Re and Nb dopants in monolayer MoS2 with dielectric environments

Year: 2015

Type: article

Source: Physical Review B

DOI: 10.1103/physrevb.92.115431

Authors: Ji-Young Noh, Hanchul Kim, Minkyu Park, Yong-Sung Kim

Institutions: Korea Research Institute of Standards and Science, Sookmyung Women's University, Korea University of Science and Technology

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Cornell University, National Research Foundation of Korea, Korea Evaluation Institute of Industrial Technology

Award: G2102308177

OpenAlex ID: W2566296170

FWCI: 1.85

Cites: 31

Cited by: 61

Related to: 10