Work

Impact of gate oxide thickness and aspect ratio of fin height and fin width on nanoscale tapered FinFETs

Year: 2016

Type: conference-paper

Source: IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology

DOI: 10.1109/rteict.2016.7808142

Authors: Navneet Kaur, Munish Rattan, Sandeep Singh Gill

Institution: Punjab Technical University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: University of the Punjab

OpenAlex ID: W2579059239

FWCI: 2.321

Cites: 10

Cited by: 13

Related to: 10