Work

Normally-off Operation GaN HEMT Devices with Nano-pattern Structure

Year: 2014

Type: conference-paper

Source: International Conference on Solid State Devices and Materials (SSDM)

DOI: 10.7567/ssdm.2014.e-3-4

Authors: Y.K. Fu, W.H. Kuo, S.F. Lin, Y.L. Chou

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2583051635

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