Work

A novel dual isolation scheme for stress and back-bias maximum efficiency in FDSOI Technology

Year: 2016

Type: conference-paper

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm.2016.7838442

Authors: R. Berthelon, F. Andrieu, P. Perreau, D. Cooper, F. Roze, O. Gourhant, P. Rivallin, N. Bernier, A. Cros, C. Ndiaye, E. Baylac, E. Souchier, D. Dutartre, A. Claverie, O. Weber, E. Josse, M. Vinet, M. Haond

Institutions: Centre National de la Recherche Scientifique, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, STMicroelectronics (France), Centre d’Élaboration de Matériaux et d’Études Structurales, Laboratoire d'Électronique des Technologies de l'Information

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funder: Electronic Components and Systems for European Leadership

OpenAlex ID: W2584868045

FWCI: 2.321

Cites: 2

Cited by: 8

Related to: 10