Work

On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire

Year: 2017

Type: article

Source: Semiconductors

DOI: 10.1134/s1063782617010249

Authors: V. V. Voronenkov, M. V. Virko, V. S. Kogotkov, A. A. Leonidov, A. V. Pinchuk, A. S. Zubrilov, R. I. Gorbunov, F. E. Latishev, N. I. Bochkareva, Y. S. Lelikov, D. V. Tarkhin, A. N. Smirnov, V. Y. Davydov, I. A. Sheremet, Y. G. Shreter

Institutions: Russian Academy of Sciences, Ioffe Institute, Peter the Great St. Petersburg Polytechnic University, Financial University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2586670367

FWCI: 0.258

Cites: 14

Cited by: 4

Related to: 10