Work

PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN

Year: 1996

Type: article

Source: MRS Internet Journal of Nitride Semiconductor Research

DOI: 10.1557/s1092578300001873

Authors: H. Angerer, O. Ambacher, R. Dimitrov, Th. Metzger, W. Rieger, M. Stutzmann

Institution: Technical University of Munich

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

Funders: Deutsche Forschungsgemeinschaft, Bayerische Forschungsstiftung

OpenAlex ID: W2587501906

FWCI: 2.423

Cites: 7

Cited by: 24

Related to: 10