Minority-carrier lifetime and photoresponse properties of B-doped p-BaSi 2 , a potential light absorber for solar cells
Year: 2017
Type: article
Abstract: 600-nm-thick B-doped p-BaSi 2 layers were grown on (111)-oriented n-Si substrates by molecular beam epitaxy, and the dependences of the minority carrier lifetime τ and photoresponsivity on the hole concentration p were investigated. p was varied from 1.4 × 10 16 to 3.9 × 10 18 cm −3 . The highest τ of 2 µs was obtained for the sample with the lowest p of 1.4 × 10 16 cm −3 , reaching two orders of magnitude higher than that of the sample with the highest p of 3.9 × 10 18 cm −3 . The low-concentration-doped sample also exhibited an excellent external quantum efficiency ( EQE ) as large as 80% at a wavelength of approximately 800 nm at a reverse bias voltage of 0.2 V. This value is higher than any other EQE s we have ever achieved for BaSi 2 , showing the great potential of p-BaSi 2 as a light absorber in solar cells.
Institutions: University of Tsukuba, Nagoya University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2588937232