Work

Improved luminescence from InGaN/GaN MQWs by reducing initial nucleation density using sputtered AlN on sapphire substrate

Year: 2017

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2017.02.034

Authors: Hongbo Wang, Hassanet Sodabanlu, Yoshiaki Daigo, Takuya Seino, Takashi Nakagawa, Masakazu Sugiyama

Institutions: The University of Tokyo, Canon Anelva (Japan), Anelva Corporation (Japan)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Japan Society for the Promotion of Science

Award: Artificial photosynthesis devices using polarization-engineered nitride semiconductors for visible-light response and high durability

OpenAlex ID: W2589683051

FWCI: 0.256

Cites: 25

Cited by: 6

Related to: 10