Work

Interfacial Defect Engineering on Electronic States of Two-Dimensional AlN/MoS2 Heterostructure

Year: 2017

Type: article

Source: The Journal of Physical Chemistry C

DOI: 10.1021/acs.jpcc.6b11270

Authors: Qinglong Fang, Yuhong Huang, Yaping Miao, Kewei Xu, Yan Li, Fei Ma

Institutions: Xi'an Jiaotong University, Shaanxi Normal University, Xi’an University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: City University of Hong Kong, National Natural Science Foundation of China, Ministry of Education of the People's Republic of China

Awards: TMD/石墨烯的叠层结构稳定性及其光电特性的应变调控研究, 应力致石墨烯类二维晶体奇异形变/相变特征及其机制研究, G809309039, G8627516275

OpenAlex ID: W2591585752

FWCI: 2.651

Cites: 61

Cited by: 37

Related to: 10