Work

Spin relaxation through lateral spin transport in heavily doped n -type silicon

Year: 2017

Type: article

Source: Physical review. B./Physical review. B

DOI: 10.1103/physrevb.95.115302

Authors: M. Ishikawa, T. Oka, Y. Fujita, H. Sugiyama, Y. Saito, K. Hamaya

Institutions: Toshiba (Japan), The University of Osaka, Center for Spintronics Research Network, Osaka University

Language: English

Topic: Quantum and electron transport phenomena

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Education, Culture, Sports, Science and Technology, Japan Society for the Promotion of Science

Awards: G1975849775, G5821199064, ガラス基板上の高規則度ホイスラー合金薄膜形成と高性能スピントロニクス素子への応用

OpenAlex ID: W2591709354

FWCI: 3.862

Cites: 46

Cited by: 42

Related to: 10