Year: 2017
Type: article
Abstract: Van der Waals heterostructures from atomically thin 2D materials have opened up new realms in modern semiconductor industry. Recently, 2D layered semiconductors such as MoS 2 and SnSe 2 have already demonstrated excellent electronic and optoelectronic properties due to their high electron mobility and unique band structures. Such combination of SnSe 2 with MoS 2 may provide a novel platform for the applications in electronics and optoelectronics. Thus, we constructed SnSe 2 /MoS 2 based van der Waals heterostructures using MoS 2 as templates, which may enrich the family of 2D van der Waals heterostructures. We demonstrate that the vdW heterostructures with high symmetry crystallographic directions show efficient interlayer charge transfer due to the strong coupling. This strong coupling is confirmed by theory calculations, low-temperature photoluminescence (PL) spectra, and electrical transport properties. High performance photodetector based on the vdW heterostructure has been demonstrated with a high responsivity of up to 9.1 × 10 3 A W −1 which is higher by two orders of magnitude than those MoS 2 -only devices. The improved performance can be attributed to the efficient charge transfer from MoS 2 to SnSe 2 at the interface.
Source: 2D Materials
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2595321307