Year: 2009
Type: article
Abstract: ingle-crystal silicon membranes with nanometer thicknesses have mechan-ical properties that can be exploited to produce unique structural and electronic effects. Their mechanical compliance makes membranes fundamentally different from bulk materials or supported thin films.1,2 The growth of nanostressors on ultrathin Si membranes takes advantage of this me-chanical compliance to create a “strain lat-tice ” consisting of very small regions of high local strain in the membrane, the order oc-curring because the local strain provides a strong and precise feedback for self-organization of the nanostressors. The
Source: ACS Nano
DOI: 10.1021/nn900396r
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2599875397