Work

Low Temperature (250℃) Crystallization of Amorphous Ge Thin Film on Insulator through Ag-induced Layer Exchange

Year: 2016

Type: conference-paper

Source: International Conference on Solid State Devices and Materials (SSDM)

DOI: 10.7567/ssdm.2016.d-5-02

Authors: R. Yoshimine, K. Toko, T. Suemasu

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2600564282

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