Comparative High-Resolution X-Ray Diffraction Analysis of GaN/AlGaN Heterostructure on Al2O3 and Si (111) Substrate Grown by Plasma Assisted Molecular Beam Epitaxy
Year: 2015
Type: article
Source: MRS Proceedings
DOI: 10.1557/opl.2015.401
Institution: Indian Institute of Technology Kharagpur
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2605339727