Single-trap analysis of hot-carrier-induced gate oxide degradation in Flash memory cells
Year: 2017
Type: article
Source: Microelectronic Engineering
Authors: Yuri Tkachev, Alexander Kotov
Institution: Microchip Technology (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2610316552