Bulk Growth of Low Resistivity n-Type 4H-SiC Using Co-Doping
Year: 2017
Type: article
Abstract: The growth of n-type 4H-SiC crystal was performed by physical vapor transport (PVT) growth method by using nitrogen and aluminum (N-Al) co-doping. Resistivity of N-Al co-doped 4H-SiC was as low as 5.8 mΩcm. The dislocation densities of N-Al co-doped substrates were evaluated by synchrotron radiation X-ray topography (SXRT). In addition, epitaxial growth was performed on the N-Al co-doped substrates by chemical vapor deposition (CVD). No double Shockley type stacking fault was observed in the epitaxial layer.
Source: Materials science forum
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W2612486010