Work

Interface-type resistive switching in perovskite materials

Year: 2017

Type: article

Source: Journal of Electroceramics

DOI: 10.1007/s10832-017-0087-9

Authors: S. Bagdzevicius, K. Maas, M. Boudard, M. Burriel

Institutions: Institut polytechnique de Grenoble, Centre National de la Recherche Scientifique, Laboratoire des Matériaux et du Génie Physique

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Agence Nationale de la Recherche

Awards: Alternative Perovskite Materials for ReRAM Memories: Understanding and tailoring resistive switching, G309771913, Design of engineered oxide thin films for future micro- and nano-electronic devices, Minatec Novel Devices Scaling Laboratory

OpenAlex ID: W2616428351

FWCI: 4.685

Cites: 154

Cited by: 148

Related to: 10