Impact of Gate–Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs
Year: 2017
Type: article
Abstract: In this paper we investigated the gate-drain access region spacing (LGD) effect on electrical and noise performance of InAlGaN/GaN metal- insulator-semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different LGDof InAlGaN/GaN MIS-HEMTs using sub-10 nm barrier layer are studied. Low-frequency noise measurements have been carried out for the first time in order to analyze the impact of the gate-drain spacing on the electrical characteristics. The noise of the channel under the gate has been identified as the dominant channel noise source for LGDH) is equal to 3.1 × 10-4. It reflects the high material quality while using sub-10 nm InAlGaN layer, which is promising for high-frequency applications.
Institutions: Centre National de la Recherche Scientifique, École Nationale Supérieure d'Ingénieurs de Caen, Normandie Université, GREYC, Université de Caen Normandie, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Centre de Recherche sur les Ions, les Matériaux et la Photonique, III V Lab, Université de Lille, Institut d'Electronique, de Microélectronique et de Nanotechnologie
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
Funder: Agence Nationale de la Recherche
OpenAlex ID: W2619252782