Work

Electrical and Structural Characterizations of BGaN Thin Films Grown by Metal-Organic Vapor-Phase Epitaxy

Year: 2008

Type: conference-paper

Source: HAL

Authors: Baghdadli, T., Ould Saad Hamady, S., Gautier, S., Moudakir, T., Ougazzaden, A., Benyoucef, B.

Institutions: Laboratoire Matériaux, Optique, Photonique et Systèmes, Georgia Tech-Europe, Georgia Tech-CNRS Laboratory, Centre National de la Recherche Scientifique

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2623473003

FWCI:

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Related to: 10