Work

Structural and optical properties of Gd implanted GaN with various crystallographic orientations

Year: 2017

Type: article

Source: Thin Solid Films

DOI: 10.1016/j.tsf.2017.07.036

Authors: A. Macková, P. Malinský, A. Jagerová, Z. Sofer, K. Klímová, D. Sedmidubský, M. Pristovsek, M. Mikulics, J. Lorinčík, R. Böttger, S. Akhmadaliev

Institutions: Czech Academy of Sciences, Jan Evangelista Purkyně University in Ústí nad Labem, Czech Academy of Sciences, Nuclear Physics Institute, University of Chemistry and Technology, Prague, University of Cambridge, Forschungszentrum Jülich, Jülich Aachen Research Alliance, Research Centre Rez, Czech Academy of Sciences, Institute of Photonics and Electronics, Helmholtz-Zentrum Dresden-Rossendorf

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Ministerstvo Školství, Mládeže a Tělovýchovy, Grantová Agentura České Republiky

Awards: Thin films of magnetically doped GaN, Creation and characterization of optical nanostructures by energetic ion beams, G75638779, G8308402148

OpenAlex ID: W2736019563

FWCI: 1.532

Cites: 42

Cited by: 15

Related to: 10