Work

Gallium kinetics on m-plane GaN

Year: 2017

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.4993570

Authors: C. B. Lim, A. Ajay, E. Monroy

Institutions: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Institut Nanosciences et Cryogénie, Université Grenoble Alpes

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Agence Nationale de la Recherche, FP7 Ideas: European Research Council

Awards: GaN Quantum Devices for T-Ray Sources, Réseau national sur GaN

OpenAlex ID: W2736183647

FWCI: 1.309

Cites: 31

Cited by: 14

Related to: 10