Reticulated shallow etch mesa isolation for controlling surface leakage in GaSb-based infrared detectors
Year: 2017
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.4997172
Authors: J. A. Nolde, E. M. Jackson, M. F. Bennett, C. A. Affouda, E. R. Cleveland, C. L. Canedy, I. Vurgaftman, G. G. Jernigan, J. R. Meyer, E. H. Aifer
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: Office of Naval Research
OpenAlex ID: W2739484303