Year: 2005
Type: dissertation
Abstract: Silicon pixel detectors have become very popular in a large variety of applications\nsuch as experimental particle physics, medical imaging, video and\ndigital cameras. The DEPFET pixel detector is a novel concept of a silicon\ndetector consisting of a JFET transistor integrated on a fully depleted silicon\nsubstrate. The signal charge generated by an ionizing particle within\nthe detector substrate is collected at the transistor gate by means of a\nspecial depletion scheme called sideward depletion. From the gate, the\nsignal charge modulates directly the JFET channel current. The current\nsignal is further amplified and processed by external electronics. The internal\namplification mechanism ensures low noise, even at room temperature.\nThe electrical charge is removed from the JFET gate by a clear mechanism.\nTwo possible clear methods have been suggested: pulsed clear and\ncontinuous clear.\nIn the present work, DEPFET structures with continuous clear mechanism\nhave been studied. A low noise analog readout circuit has been\ndeveloped in CMOS technology. This readout chip has been tested with\ndifferent DEPFET pixel structures. By recording energy spectra of known\nradioactive sources, an electronic noise of about 13 e− has been measured\nat room temperature. The DEPFET device opens therefore new possibilities\nfor applications that require very good energy resolution at room\ntemperature.
Author: A. Niculae
Language: English
Subfield: Nuclear and High Energy Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
Funder: Universität Siegen
OpenAlex ID: W2744544149