Work

Progressive current degradation and breakdown behavior in GaN LEDs under high reverse bias stress

Year: 2017

Type: article

Source: Chinese Physics B

DOI: 10.1088/1674-1056/26/8/087308

Authors: Linna Zhao, Peihong Yu, Zixiang Guo, Dawei Yan, Hao Zhou, Jinbo Wu, Zhiqiang Cui, Huarui Sun, Xiaofeng Gu

Institutions: Jiangnan University, University of Science and Technology of China, Harbin Institute of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2744588467

FWCI: 0.128

Cites: 9

Cited by: 1

Related to: 10