Work

Barrier Height Variation in Ni-Based AlGaN/GaN Schottky Diodes

Year: 2017

Type: article

Abstract: In this paper, we have investigated Ni-based AlGaN/GaN Schottky diodes comprising capping layers with silicon-technology-compatible metals such as TiN, TiW, TiWN, and combinations thereof. The observed change in Schottky barrier height of a Ni and Ni/TiW/TiWN/TiW contact can be explained by stress effects induced by the TiW/TiWN/TiW capping layer, rather than by chemical reactions at the metal-semiconductor interface. Secondary-ion mass spectroscopy and transmission electron microscopy techniques, for samples with and without a TiW/TiWN/TiW cap, have been used to show that no chemical reactions take place. In addition, electrical characterization of dedicated samples revealed that the barrier height of Ni/TiW/TiWN/TiW contacts increases after stepwise selective removal of the TiW/TiWN/TiW cap, thus demonstrating the impact of strain.

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2017.2742991

Authors: Marcin Hajlasz, Johan J. T. M. Donkers, Saurabh Pandey, Fred Hurkx, Raymond J. E. Hueting, Dirk J. Gravesteijn

Institutions: Materials innovation institute, University of Twente, NXP (Netherlands)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funders: Materials innovation institute, Institute of Materials Research and Engineering, Division of Materials Research

OpenAlex ID: W2753242578

FWCI: 0.282

Cites: 23

Cited by: 6

Related to: 10